A MESFET variable-capacitance analytical model

Abstract

A variable-capacitance model suitable for MMIC active voltage-controlled filter has been reported. The analytical expression is also given for the gate capacitance as a function of the gate bias. Since the free carrier move in active region for contributing to the gate capacitance is considered, the results calculated from the new model are in agreement with the experimental results. Hence, the new model is very useful for determining voltage-tuning bandwidth in MMIC active filter or MMIC VCO’s.