Abstract
AbstractModeling GaAsFETs in MMIC active filter circuits at microwave frequencies is hampered by the complex dependence of the small‐signal model elements on bias voltages, bias currents, and frequency. Several authors have attempted an improved GaAsFET model by starting with the Curtice model of the device. This article takes a different path in developing a model for SPICE usage: a Curtice model GaAsFET is used to set the DC bias conditions; based upon these bias conditions, values for each small‐signal element are calculated. This model has been found to be especially useful for tuning studies of MMIC active filters. Results are presented for an MMIC active bandpass filter based on a twin‐tee notch filter. © 1994 John Wiley & Sons, Inc.
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