Abstract

A manufacturable and reliable low-k intermetal dielectric (IMD) using FSG is demonstrated. Film properties such as thickness, refractive index, stress and fluorine content and their thermal stability have been characterized. Dependency of line-to-line capacitance, via contact resistance (R/sub c/), and hot carrier reliability on FSG based IMD schemes are compared. We conclude that a simple, full FSG IMD with lower F content (4.7%) without undoped oxide (USG) as under- or cap-layer is feasible to achieve best interconnect performance with excellent thermal stability. Various product reliability tests demonstrate that the FSG IMD is highly reliable.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.