Abstract

We have comprehensively characterized inorganic HSQ as a low-k intermetal dielectric (IMD). Line-to-line capacitance reduction of over 20% for 0.23/0.23 /spl mu/m metal pitch has been achieved and excellent thermal stability of high performance interconnects is demonstrated. With proper treatment, the contact resistance (R/sub c/) of shrunk unlanded vias is proven to be good and a five-level metal logic vehicle with HSQ IMD shows comparable yield to undoped oxide (USG) IMD. With optimized process flow, HSQ exhibits better hot carrier reliability than USG. Furthermore, adhesion tests indicate that HSQ has excellent mechanical strength. By various product reliability tests, the low-k HSQ IMD is demonstrated to be highly reliable.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.