Abstract
We have comprehensively characterized inorganic HSQ as a low-k intermetal dielectric (IMD). Line-to-line capacitance reduction of over 20% for 0.23/0.23 /spl mu/m metal pitch has been achieved and excellent thermal stability of high performance interconnects is demonstrated. With proper treatment, the contact resistance (R/sub c/) of shrunk unlanded vias is proven to be good and a five-level metal logic vehicle with HSQ IMD shows comparable yield to undoped oxide (USG) IMD. With optimized process flow, HSQ exhibits better hot carrier reliability than USG. Furthermore, adhesion tests indicate that HSQ has excellent mechanical strength. By various product reliability tests, the low-k HSQ IMD is demonstrated to be highly reliable.
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