Abstract
The authors propose a novel structured magnetic thin film inductor using rotation magnetization only. The thin film inductor has a sandwich structure, which consists of a double-rectangular spiral coil between top and bottom CoZrNb amorphous thin films. The sputtered CoZrNb amorphous magnetic thin films have uniaxial magnetic anisotropy induced by direct current field annealing. The easy magnetization axis is directed to the main axis of the rectangular spiral coil. Hence, only the rotation magnetization process dominates in this device. The typical specifications are as follows; 3.5/spl times/5.5 mm in size, inductance of 1 /spl mu/H constant up to 10 MHz, and a quality factor of 10 at 10 MHz. A MHz switching chopper dc-dc converter has been developed by using this thin film inductor, bare-chip semiconductor devices (a power MOSFET and a Schottky barrier diode), and a multilayer ceramic capacitor. This converter with a 0.1 cc volume has an output power over 1 W at 5 MHz switching, and the power density exceeds 10 W/cc (160 W/in/sup 3/). >
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