Abstract
The investigated sample is composed of six single quantum wells of GaInAs, lattice-matched to InP, at well widths down to one monolayer. The sample is grown by metalorganic vapour phase epitaxy at reduced pressure with short growth interruptions applied at both hetero-interfaces. The interpretation of low temperature photoluminescence data demonstrates the existence of monolayer-flat terraces at the hetero-interfaces. The temperature dependence of the photoluminescence is explained in terms of different exciton transfer mechanisms and qualitative information about the lateral extent of the monolayer-flat terraces is obtained. Cathodoluminescence images were recorded for luminescence peaks, corresponding to thickness variations of one monolayer, within the quantum well width. The images show complete complementarity in the contrast fluctuations over the entire sampled area which is interpreted as a direct observation of monolayer-flat terraces with lateral extent up to ≈ 2 μm.
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