A low-power and low-noise X-band receiver MMIC in 90nm CMOS

Abstract

This paper presents the design and analysis of a high performance receiver front-end for various X-band applications. The proposed circuits employ transformer feedback and resonant-coupled networks (RCNs) for the low-noise amplifier (LNA). The mixer design uses a double-balanced topology to achieve low power and also low noise characteristics. The IF post-amplifier adopts the Cherry-Hooper based variable gain amplifier (VGA) with 3D inductors for wideband and high linearity considerations. Implemented in a 90-nm CMOS process, the whole receiver front-end dissipates only 22.8 mA from a 1.2-V supply voltage. The measured NF is below 3.8 dB with a maximum conversion gain of 65.1 dB within the X-band of 8–12 GHz. The average output P1dB over this frequency range is measured as 1.12 dBm at the maximum gain.