A low-noise high-sensitivity readout circuit for MEMS capacitive sensors

Abstract

This paper presents a differential low-noise highresolution switched-capacitor readout circuit that is intended for capacitive sensors. Amplitude modulation/demodulation and correlated double sampling are used to minimize the adverse effects of the amplifier offset and flicker (1/f) noise and improve the sensitivity of the readout circuit. In order to simulate the response of the readout circuit, a Verilog-A model is used to model the variable sense capacitor. The interface circuit is designed and laid out in a 0.8 µm CMOS process. Postlayout simulation results show that the readout interface is able to linearly resolve sense capacitance variation from 2.8 aF to 0.3 fF with a sensitivity of 7.88 mV/aF from a single 5V supply (the capacitance-to-voltage conversion is approximately linear for capacitance changes from 0.3 fF to~1.2 fF). The power consumption of the circuit is 9.38 mW.