Abstract
An amplifier is described for use with indium antimonide photoconductive detectors, such as the cooled Mullard ORP13. Field effect transistors are used to give a high input impedance, 5 MΩ, and low noise, 30 nv Hz−½ at 1 kHz. When the amplifier is used with such an infra-red detector the low 1 kHz spot noise figure of 0·2 dB is obtained. The bandwidth of 1 Hz to 70 kHz is ideal for systems with mechanical chopping of the infra-red radiation. The amplifier is stabilized against variations in supply voltage and temperature.
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