Abstract
This article presents a wideband mixer using a TSMC 0.18 µm complementary metal-oxide semiconductor technology process for ultra-wideband (UWB) system applications. The measured 3-dB radio frequency (RF) bandwidth is from 3 to 8.4 GHz with an intermediate frequency of 10 MHz. The measurement results of the proposed mixer achieve 8.1 dB average power conversion gain −5 dBm input third-order intercept point (IIP3) at 7.4 GHz and 12.4–13.3 dB double side band noise figure. The total dc power consumption of this mixer including output buffers is 3.18 mW from a 1 V supply voltage. The output current buffer consumption is about 2.26 mW with an excellent local oscillator-RF isolation of up to 40 dB at 5 GHz. The article presents a mixer topology that is greatly suitable for low-power operation in UWB system applications.
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