Abstract
AbstractA new band‐gap reference (BGR) circuit employing sub‐threshold current is proposed for low‐voltage operations. By employing the fraction of VBE and the sub‐threshold current source, the proposed BGR circuit with chip area of 0.029mm2 was fabricated in the standard 0.18µm CMOS triple‐well technology. It generates reference voltage of 170 mV with power consumption of 2.4µW at supply voltage of 1 V. The agreement between simulation and measurement shows that the variations of reference voltage are 1.3 mV for temperatures from −20 to 100∘C, and 1.1 mV per volt for supply voltage from 0.95 to 2.5 V, respectively. Copyright © 2010 John Wiley & Sons, Ltd.
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