Abstract
Scaling problems and limitations of conventional silicon transistors have led the designers to exploit novel nano-technologies. One of the most promising and feasible nano-technologies is CNT (Carbon Nanotube) based transistors. In this paper, a high-speed and energy-efficient CNFET (Carbon Nanotube Field Effect Transistor) based Full Adder cell is proposed for nanotechnology. This design is simulated in various supply voltages, frequencies and load capacitors using HSPICE circuit simulator. Significant improvement is achieved in terms of speed and PDP (Power-Delay-Product) in comparison with other classical and state-of-the-art CMOS and CNFET-based designs, existing in the literature. The proposed Full Adder can also drive large load capacitance and works properly in low supply voltages.
Highlights
Scaling down the feature size of MOSFET devices in nanometer, leads to serious challenges, such as short channel effects, very high leakage power consumption and large parametric variations
Electronic device designers exploit semiconducting SWCNT as the channel of the Carbon Nanotube Field Effect Transistor (CNFET), which was first fabricated by Tans, Verschueren, and Dekker in 1998 [18]
The great advantage of Carbon Nanotube Field Effect Transistors (CNFET) devices is that the P-type and N-type CNFETs with the same device size have the same mobility, which simplifies the process of transistor sizing, in complex circuits with a large number of transistors [19]
Summary
Scaling down the feature size of MOSFET devices in nanometer, leads to serious challenges, such as short channel effects, very high leakage power consumption and large parametric variations Due to these limitations researchers become eager to work toward new emerging technologies such as Quantum Automata (QCA) [1], Nanowire transistors [2] and Carbon Nanotube Field Effect Transistors (CNFET) [3]. Electronic device designers exploit semiconducting SWCNT as the channel of the Carbon Nanotube Field Effect Transistor (CNFET), which was first fabricated by Tans, Verschueren, and Dekker in 1998 [18]. The threshold voltage of a CNFET is inversely proportional to the diameter of the CNT as it is shown in Eq (1) This makes it possible for CNFET to be turned on, at the required voltages and designing complex circuits with better performance becomes more feasible [17]. DCNT itself could be calculated based on the following equation [17]: working and characteristics, in this paper MOSFET-like CNFETs are utilized for designing the proposed circuit
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