Abstract
In this paper, a 4H-SiC trench insulated gate bipolar transistor (IGBT) incorporating a Schottky contact in the collector side is proposed to reduce the turn-off energy loss. The proposed structure is explored and compared with the conventional IGBT using ATLAS. The simulation results have indicated that the reduction in turn-off energy loss is more than 88%, with a slight degradation in the ${I}$ – ${V}$ characteristics. Concurrently, with the same on-state voltage drop, the turn-off loss is reduced by a figure of 84%.
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