Abstract
To improve the dielectric properties of sputter-deposited hafnium oxide (HfO2) films, the supercritical CO2 (SCCO2) fluid technology is introduced as a low temperature treatment. The ultrathin HfO2 films were deposited on p-type (100) silicon wafer by dc sputtering at room temperature and subsequently treated with SCCO2 fluids at 150°C to diminish the traps in the HfO2 films. After SCCO2 treatment, the interfacial parasitic oxide between the Si substrate and HfO2 layer is only about 5Å, and the oxygen content of the HfO2 films apparently increased. From current-voltage (I-V) and capacitance-voltage (C-V) measurements, the leakage current density of the SCCO2-treated HfO2 films is repressed from 10−2to10−7A∕cm2 at electric field=3MV∕cm due to the reduction of traps in the HfO2 films. The equivalent oxide thickness also obviously decreased. Besides, the efficiency of terminating traps is relative to the pressure of the SCCO2 fluids.
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