Abstract
AbstractThis letter presents a full band low power low noise amplifier design in 0.18‐μm complementary metal‐oxide‐semiconductor FET (CMOS) technology.The proposed circuit adopts current reused technique to achieve low power consumption, and shunt resistive feedback for wide‐band operation. An excellent wide and flat gain, low noise figure, are achieved by composes of these techniques. The implemented ultra‐wideband (UWB) low noise amplifier (LNA) exhibits a flat gain of 18 dB with total power consumption of 5.2 mA from 1.8 V power supply. The noise figure is 3.1 dB within the entire bandwidth. The input and output return loss is less than −10 dB in the specified bandwidth. The proposed technique exhibits 0.8 dBm of IIP3. The active die area of UWB LNA occupies 0.72 mm2. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett, 54:471–474, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26550
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