Abstract
This paper presents a low power CMOS RF front-end with a low noise amplifier (LNA) and mixer for long term evolution (LTE) direct conversion receiver. Noise figure and linearity are key parameter of LTE receiver front-end. The source inductive degeneration LNA is designed achieving matched input impedance over a wide bandwidth. For low power consumption issue, a direct conversion receiver with LNA and mixer employ folded-cascode architecture. The receiver front-end operates from 2545 to 2700 MHz covering frequency band 7 of LTE standard. The front-end achieves 8.89 dB conversion gain, 8.25 dB NF, −9.5 dBm IIP3, −17 dBm P1dB and 3.12 mW power consumption. All the circuits are designed in 0.18 µm CMOS process with 1.2V supply voltage.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call