Abstract
This paper presents a 1-10 GHz low power and low noise amplifier (LNA) with resistive-feedback configuration. The design consists of two resistive-feedback amplifier. In order to reduce the chip area, resistive-feedback inverter is adopt for input matching. The output stage adopt basic topology of a resistive feedback for output matching, and add two inductor for inductive peaking at high-band. The implemented LNA shows a peak gain of 10.5 dB, the input reflection coefficient S11 lower than -8 dB and output reflection S22 are lower than -10.8 dB, and NF of 4.2~5.2 dB between 1~10 GHz while consuming 12.65 mw through a 1.5 V supply. The chip was fabricated in TSMC 0.18 um CMOS process.
Published Version
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