A Low-Power 130-GHz Tuned Frequency Divider in 90-nm SiGe BiCMOS

Abstract

This letter presents a tuned frequency divider in a 90-nm SiGe BiCMOS process. The operating bandwidth is 120–140 GHz with a self-oscillation frequency of 130 GHz. The input sensitivity at 130 GHz is -25 dBm and remains less than -4 dBm at 120–134 GHz. The chip consumes 45.1 mW from a 2-V supply, with a core power consumption of 36 mW. Potential applications include frequency synthesis in the 120–140-GHz band.