Abstract
A two-stage low-noise amplifier (LNA), designed using GlobalFoundries' 130 nm SiGe BiCMOS process technology for 56–64 GHz applications is presented in this paper. The LNA consists of two cascode stages, with inductive degeneration using short stub transmission lines with a quarter wavelength. The input matching and output matching adopt T-section matching to ensure optimal noise and input matching, while realizing high gain over the desired frequency using the interstage and output matching. The designed LNA uses 7.6 mW of dc power from a 1.5 V supply, while achieving 22.99 dB gain and a noise figure of 4.43 dB at 60 GHz. It is unconditionally stable and has a 3 dB bandwidth of 3.9 dB across the V-band.
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