Abstract
GaAs MESFETs exhibit low-frequency anomalies which effect the performance of broadband systems. A four-terminal large-signal GaAs MESFET circuit model which predicts may of the low-frequency anomalies discovered in GaAS MESFETs is proposed. The four-terminal model accurately models 'drain lag', frequency dependence of the output resistance, and hysteresis. This model when implemented in a circuit analysis program will enable circuit designs to predict which circuit topologies will be more or less sensitive to the GaAs low-frequency anomalies. >
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