Abstract
A high-speed and high-sensitivity planar GaAs/Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.3</sub> Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.7</sub> As heterostructure Schottky barrier photodiode is discussed. Using a highly doped Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.3</sub> Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.7</sub> As buffer layer between the active layer and semi-insulating GaAs substrate, the series resistance and the undesired diffusion tailing are greatly reduced. Studies of surface stabilization and antireflection coating, performed to reduce the reverse-bias dark current and the reflection loss, resulted in significant improvement in the sensitivity of the photodiode. The measured internal quantum efficiency and responsivity are 60-77% and 0.47-0.6 A/W, respectively, for the wavelength range of 0.5-0.84 μm. A risetime of 8.5 ps and an FWHM of 16 ps were measured by using a sampling/correlation method.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
