Abstract
Cuprous oxide (Cu2 O) photocathode is reported as a promising candidate for photoelectrochemical water splitting. The p-type Cu2 O usually forms a Schottky junction with the conductive substrate due to its large work function, which blocks the collection of photogenerated holes. NiO is considered as one of the most promising hole transfer layers (HTL) for its high hole mobility, good stability, and easy processability to form a film by spin coating. The utilization of NiO HTL to form an Ohmic back contact to Cu2 O is described, thus achieving a positive onset potential of 0.61 V versus reversible hydrogen electrode and a twofold increase of solar conversion efficiency.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
