Abstract
Hole transporting layers are very important for solar energy conversion devices, such as perovskite solar cells, organic photovoltaic devices and solar water splitting cells. Recently, CuGaO2 as a hole transporting layer has attracted intense interest due to its high hole mobility and wide band gap. However, there is still a challenge to prepare a semitransparent CuGaO2 film. It is desirable to develop a facile method to prepare a CuGaO2 film with good electronic contact and semi-transparency for application in solar energy conversion devices. Herein, for the first time, a one-step hydrothermal method is developed to directly grow semi-transparency p-CuGaO2 films on FTO substrates. CuGaO2 single crystals with much larger grain sizes are obtained, which are important for the applications as hole transporting layers. We find that Br− in the precursor solution plays a key role in obtaining a semitransparent CuGaO2 film. The effects of Br− on the growth of CuGaO2 are also investigated in details. As an example, a CuGaO2 film is used as a hole transfer layer to improve photoelectrochemical performance of a CuInS2 photocathode for solar water splitting.
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