A lithography-independent and fully confined fabrication process of phase-change materials in metal electrode nanogap with 16-μA threshold current and 80-mV SET voltage

Yingchun Fu,Chun Chang,Xiaogang Chen,Zhitang Song,Jiayong Zhang,Xiaofeng Wang,Kaifang Cheng,An Ji,Songlin Feng,Xiaodong Wang,Fuhua Yang,Huili Ma

doi:10.1007/s00339-012-7083-3

A lithography-independent and fully confined fabrication process of phase-change materials in metal electrode nanogap with 16-μA threshold current and 80-mV SET voltage

Yingchun Fu, Chun Chang + Show 10 more

https://doi.org/10.1007/s00339-012-7083-3

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Journal: Applied physics	Publication Date: Oct 16, 2012
Citations: 6

Affiliation: Institute of Semiconductors, Chinese Academy of Sciences, Shanghai Institute of Microsystem and Information Technology

#SET Voltage #Low SET Voltage + Show 8 more

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Abstract

In this paper,we fabricate a lateral phase change memory device composed of a Ge2Sb2Te5 nanowire (GST NW) fully confined in a tungsten electrode nanogap. A SiNx spacer is used not only as etch mask for the fabrication of the GST NW, but also as sacrificial layer for the lift-off process, which makes it feasible to fully confine the GST NW in the metal electrode nanogap. Electrical characterization shows that the device has unprecedentedly low threshold current and SET voltage of only 16 µA and 80 mV, respectively.

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