Abstract
This work presents an experimental investigation and relevant discussion of the link existing between noise parameters and light exposure of GaAs pseudomorphic HEMT’s at microwave frequencies. A 100μm gate width AlGaAs/InGaAs/GaAs heterostructure device has been illuminated with CW visible laser light (650nm) and a systematic analysis has been performed by examining the device behavior under controlled bias current conditions. Significant effects have been brought to evidence in the 2–26GHz noise parameters Fmin, Γopt and Rn measured in the different conditions. A clear correlation has been found between the level of degradation of the noise parameter behavior and the light exposure.
Published Version
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