A linearity enhancement technique for low-noise transconductance amplifiers in SAW-less receivers

Abstract

A new linearization technique for the transconductance of MOS transistors has been proposed. In the presented method a new composite transistor has been proposed. Moreover, composite transistors with different operating points are connected in parallel to boost the transconductance and cancel the distortion of the overall structure. The superiority of the proposed technique over the previously reported methods is that it also improves the linearity for high-power input signals. A detailed analysis has been given to prove the effectiveness of the newly proposed technique. In order to verify the analysis, a Low-Noise Transconductance Amplifier has been designed exploiting the presented approach and the extensive post-layout simulation results demonstrate at least 26 dB and 7 dB improvements in IIP3 and 1-dB compression point, respectively.