Abstract
AbstractThis paper investigates the basic operation of a new type of cut‐off optical modulator using a GaAlAs layer on a GaAs substrate as waveguide whose p*nn* structure is suitable for monolithic optical devices. A new numerical solution for the field in the depletion layer of a reverse‐biased pn junction diode is presented. This method is applied to the above‐mentioned cut‐off type optical modulator for calculation of the field in the two‐dimensional layer as the modulation space. For the modulator a three‐layer slab structure is assumed and the modulation is analyzed with respect to the applied voltage by the method of eigenmode expansion from the waveguide viewpoint. Results show that for a modulator with length of several mm modulation of 90% and above can be achieved.
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