Abstract
A light-emitting field-effect transistor was fabricated, with its architecture based on a distinct heterojunction located midway between the source and drain contacts. Tetracene enabled hole transport on one side of the heterojunction (hole mobility ∼0.071 cm2/Vs), while amorphous solution-processed zinc tin oxide supported electron transport on the other side (electron mobility ∼0.81 cm2/Vs). The drain current vs. gate voltage curves of this device have a bell-shaped profile that is characteristic of lateral heterojunction bipolar field-effect transistors. The green light emission—from tetracene—closely follows the trend in drain current and is naked-eye visible in a darkened room.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
