Abstract
ABSTRACTLEED and Auger electron spectroscopy have been used to studied the interface formation of bismuth on InSb(110). For the first time, well defined superstructures were observed at room temperature on metal/semimetal-III-V semiconductors. A (1×2) phase, at 0.5 ML bismuth coverage, and a (1×3) phase, at 0.4 ML bismuth coverage, appear with different thermal heat cycling. The dynamical origin of these phases is thought to be a repulsive interaction between overlayer chains due to the detailed geometry of the overlayer chain structure and to the overlayer induced strain field within the substrate.
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