Abstract
A new lateral trench-MOS bipolar-mode FET, which shows the normally-off characteristics, is proposed and verified by device simulation. The n-channel region is pinched off by a trench MOS structure of which the electrode is p-type silicon and the potential is fixed to the ground. The channel withstands up to the avalanche condition at the drain side. The current gain of the LTBMFET is improved without sacrificing the breakdown voltage and leakage current when compared with the conventional LBMFET.
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