Abstract
AbstractA novel photoelectric response observed in a nanoscale Cu‐dusted Cu–SiO2–Si structure is reported. By combining the application of a short voltage pulse with laser illumination, the photoelectric response of the structure can be permanently changed. Intriguingly, if a second voltage pulse of reverse polarity is applied under similar laser illumination, the photoelectric response of the structure can be restored to its initial state, showing that the photoelectric states of the structure can be switched back and forth in a nonvolatile manner. This phenomenon is attributed to a controllable change of height of the Schottky barrier formed between the Cu nanoparticles and the N‐type silicon substrate, indicating that tunneling of confined photoelectrons from the Si causes an adjustment of the Fermi level of the Cu particles. The work suggests a new switching approach for tailoring photoelectric sensors, nonvolatile memories, and even solar cells related materials.
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