Abstract
The successful fabrication of a 32 cm 3 planar high purity Ge radiation detector is reported. Characteristics of the crystal and procedures for contact making are described. Detector characteristics at 4500 V bias are found to be as follows: leakage current <40 pA; detector contribution to line width at 1.33 MeV is 1.72 keV; efficiency at the same energy is 6.79%. Spectra obtained with a room temperature FET preamplifier for 60Co are shown.
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