Abstract
The neutron damage and annealing characteristics of five high purity Ge planar radiation detectors have been studied. Irradiation with fast neutrons is several steps and annealing at different temperatures has given data on neutron radiation resistance of the devices and on the recovery of the original characteristics after damage. It is found that resolution characteristics begin to be degraded at an integrated dose of approximately 10 10n/cm 2, very much like in the case of Li-drifted detectors. Annealing of the damage can be accomplished readily by heating to 250°C for periods of about 1 h. It is observed that the recovered detectors exhibit better resolution than before the damage-anneal cycle. This phenomenon has been investigated by Hall effect measurements of two samples of high purity Ge and it is found that the damage-anneal cycle results in the change of the electrical properties of deep acceptor levels caused by impurities to the effect that they cease behaving like ionized acceptor traps.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
