Abstract
A new technique for a large-signal SOI MOSFET model with self-heating is proposed, based on thermal and electrical parameters extracted by fitting a small-signal model to measured s-parameters. A thermal derivative approach is developed to calculate the thermal resistance when the isothermal dc drain conductance is extracted from small-signal fitting. The thermal resistance is used to convert the measured dc current-voltage (I-V) characteristics containing the self-heating effects to the isothermal I-V characteristics needed for the large-signal model. Large-signal pulse and sinusoidal input signals are used to verify the model by measurement, and shown to reproduce the observed large-signal behavior of the devices with great accuracy, especially when two or more thermal time constants are used.
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