A large-scale parametric study of InP deposition on patterned substrates

Abstract

Selective Area Epitaxy (SAE) is the process of locally depositing a semiconductor film on a substrate which has been patterned with an inert masking material such as SiO 2. During deposition by metalorganic chemical vapor deposition (MOCVD), the build up of precursors over the SiO 2 mask causes material to diffuse into the open areas leading to a growth rate increase. SAE is an important technique for electronic and photonic device fabrication, and for the monolithic integration of these devices. The present work is a single comprehensive study, which reports on the impact of all major MOCVD parameters to SAE indium phosphide films. The parameters include pressure, V/III pressure ratio, growth rate, temperature and mask geometry.