Abstract
In this paper, we outline the detailed arguments involved in developing a kinetic model describing surface pyrolysis of tris(dimethylamino) arsine (TDMAAs) on a GaAs(100) surface. Two decomposition pathways of TDMAAs on GaAs(100) are assumed: simple scission of the arsenic and nitrogen bond and surface β-hydrogen transfer reaction. The pre-exponential factor for the scission of the parent is assumed to be the largest among the species going through the scission pathway. Removal of the last dimethylamino ligand is assumed to be essentially the rate-limiting step of the overall decomposition of TDMAAs. The reaction steps and constraints so constructed enable us to derive kinetic parameters of reasonable values from temperature-programmed desorption data in literature. Computer simulations based on the model reproduce well the behavior of data in literature of desorption products from a heated GaAs(100) surface exposed to TDMAAs inside a vacuum chamber.
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