Abstract
A general theoretical framework for crystal growth is presented. Some important features of this framework are (i) unlike previous theories, different adsorption isotherms are considered, including the isotherm obtained from electrical double-layer theory; (ii) several surface reaction mechanisms can be compared with experimental results; (ii) new equations that not only fit experimental results but also provide a logical explanation for crystallization phenomena are formulated; and (iv) a dimensionless ratio which characterizes the transition from surface-reaction-controlled growth to diffusion-controlled growth is presented.
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