Abstract
A three stage 28 GHz power amplifier (PA) with on-chip power detector is presented. A 0.15 μm GaAs pHEMT process is used to implement the power amplifier. The chip size is 2.09 mm × 1.28 mm including the on-chip power detector and I/O pads. The PA die chip is attached on a commercial open cavity QFN package to evaluate the performances in surface mount use. The on-chip power detector is designed with directional coupler using diode rectifier to monitor available output power from the PA. The detector output voltage is very coherent to the output power in the operation frequency from 26.6 GHz to 29.2 GHz, where the deviation of the detector output voltage is lower than ± 3.7 % up to 27.4 dBm output power. The output PSUB1dB/SUB is over than 26.9 dBm, saturated output power is over 27.4 dBm, and the PAESUBmax/SUB is 25~30 % across the operation frequency.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
