Abstract
In this brief, amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) are fabricated at . Inductively coupled plasma chemical vapor deposition (ICP-CVD) is used to grow SiOx gate dielectric of the a-IGZO TFTs. The fabricated devices exhibit a high saturation mobility of 26.85 cm2/V·s, a steep subthreshold swing of 0.145 V/decade, and an ON/OFF current ratio of 2.3×107. Atomic force microscope and scanning electron microscope images show that the surface characteristics of the ICP-CVD SiOx gate dielectric are much superior to those of the conventional plasma-enhanced CVD SiOx. It is suggested that the superior surface characteristics of the ICP-CVD SiOx are the main origin of the high performance of the a-IGZO TFTs with the ICP-CVD SiOx gate dielectric.
Published Version
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