Abstract
In this paper, a hybrid wide drain polycrystalline silicon (poly-Si) fin-like thin-film transistor (FinTFT) for radio frequency (RF) applications is fabricated. A high $I_{\mathrm {ON}}/I_{\mathrm {OFF}}$ current ratio (>108) and favorable gate control (SS = 198 mV/dec) are observed, and a high cutoff frequency ( $f_{T} =9.55$ GHz @ $V_{\text {DS}}=1$ V and 12.45 GHz @ $V_{\text {DS}}=2$ V) is achieved. The hybrid wide drain poly-Si FinTFT developed in this paper exhibits excellent gate controllability and good high-frequency characteristics as compared with the conventional poly-Si TFT. The effect of the extended length of wide drain on the high-frequency characteristics of poly-Si FinTFT is investigated and analyzed by using the extracted small-signal parameters. Increasing the extended length not only can improve the high-frequency performance which degrade due to additional fringing capacitance in 3-D multigate structure but also can increase the breakdown voltage. This result suggest the possible use of the poly-Si TFT technology for RF integrated circuits and show a great potential to the future system on panel or system on glass.
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