A hybrid ferroelectric and charge nonvolatile memory

Shantanu R Rajwade,Kshitij Auluck,Keith Lyon,Jonathan Shaw,Edwin C Kan

doi:10.1109/drc.2011.5994474

A hybrid ferroelectric and charge nonvolatile memory

Shantanu R Rajwade, Kshitij Auluck + Show 3 more

https://doi.org/10.1109/drc.2011.5994474

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Publication Date: Jun 1, 2011

Citations: 1

Affiliation: Cornell University

#Ferroelectric Layer #Single Gate Stack + Show 8 more

Abstract
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Abstract

We introduce a new nonvolatile memory that incorporates ferroelectric (FE) switching layer and charge-storage floating node in a single gate stack. This hybrid FE-charge design reduces the depolarization field in the FE layer as well as increases the memory window over conventional FE-FET. The magnitude of the electric field in the tunnel dielectric is reduced at retention and enhanced at program/erase from the FE polarization. This paper discusses the working principle, gate stack design, fabrication and experimental results of this hybrid design compared to FE-FET and charge-trap Flash.

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