Abstract
By using the thermomigration process of Anthony and Cline (based upon Pfann’s temperature-gradient zone-melting process of the fifties) we have produced parallel aluminum-doped zones extending entirely through an n-type silicon slice of normal thickness. By applying a shallow p-type emitter diffusion to one face and interrupting it within each ’’cell’’ by means of an n+stripe that makes contact to the n-type base of the cell, we have realized a monolithic series-array solar battery, with results that constitute a feasibility demonstration of the method. Its advantages are permitting the entire thickness of the slice to constitute an active region and avoiding more costly dielectric isolation of cells or hand assembly of cells.
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