Abstract
This paper focuses on the design and fabrication of a high-temperature piezoresistive pressure sensor with an integrated signal-conditioning circuit, which consists of an encapsulated pressure-sensitive chip, a temperature compensation circuit and a signal-conditioning circuit. A silicon on insulation (SOI) material and a standard MEMS process are used in the pressure-sensitive chip fabrication, and high-temperature electronic components are adopted in the temperature-compensation and signal-conditioning circuits. The entire pressure sensor achieves a hermetic seal and can be operated long-term in the range of −50 °C to 220 °C. Unlike traditional pressure sensor output voltage ranges (in the dozens to hundreds of millivolts), the output voltage of this sensor is from 0 V to 5 V, which can significantly improve the signal-to-noise ratio and measurement accuracy in practical applications of long-term transmission based on experimental verification. Furthermore, because this flexible sensor’s output voltage is adjustable, general follow-up pressure transmitter devices for voltage converters need not be used, which greatly reduces the cost of the test system. Thus, the proposed high-temperature piezoresistive pressure sensor with an integrated signal-conditioning circuit is expected to be highly applicable to pressure measurements in harsh environments.
Highlights
In recent years, silicon piezoresistive pressure sensors fabricated using MEMS technology have been extensively applied in commercial and industrial fields because of their small size, high precision and low cost [1]
General acquisition follow-upsystem, pressure transmitter devices in the voltage converter need not be added, because the standard signal output can be directly acquired by the signal acquisition system, which greatly reduces the cost of the test system
This paper focuses on the design and fabrication of a high-temperature piezoresistive sensor with an integrated signal-conditioning circuit, which consists of an encapsulated pressurepressure sensor with an integrated signal-conditioning circuit, which consists of an encapsulated sensitive chip, a temperature compensation circuit, and a signal-conditioning circuit
Summary
Silicon piezoresistive pressure sensors fabricated using MEMS technology have been extensively applied in commercial and industrial fields because of their small size, high precision and low cost [1]. Piezoresistive sensors, which ratio usually has a small output (from tens to hundreds of than in pressure conventional application environments [6]; more consideration should be signal interference is has inevitable over long distances, especially the signal output of millivolts). This interference a serious impact on among measurement accuracy. General acquisition follow-upsystem, pressure transmitter devices in the voltage converter (shown in Figure 1) need not be added, because the standard signal output can be directly acquired by the signal acquisition system, which greatly reduces the cost of the test system
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