A high-speed, small-area, threshold-voltage-mismatch compensation sense amplifier for gigabit-scale DRAM arrays

Abstract

A high-speed small-area DRAM sense amplifier with a threshold-voltage (V/sub T/) mismatch compensation function is proposed. This sense amplifier features a novel hierarchical data-line architecture with a direct sensing scheme that uses only NMOS transistors in the array, and simple V/sub T/ mismatch compensation circuitry using a pair of NMOS switching transistors. The layout area of the sense amplifier is reduced to 70% of that of a conventional CMOS common I/O sense amplifier due to the removal of PMOS transistors from the array. The readout time is improved to 35% of that of a conventional CMOS sense amplifier because of direct sensing and a 1/10 reduction in V/sub T/ mismatch. This sense amplifier eliminates the sensitivity degradation and the area overhead increase that are expected in gigabit-scale DRAM arrays. >