Abstract
Based on InAs/GaAs quantum dots [QDs], a high-power and broadband superluminescent diode [SLD] is achieved by monolithically integrating a conventional SLD with a semiconductor optical amplifier. The two-section QD-SLD device exhibits a high output power above 500 mW with a broad emission spectrum of 86 nm. By properly controlling the current injection in the two sections of the QD-SLD device, the output power of the SLD can be tuned over a wide range from 200 to 500 mW while preserving a broad emission spectrum based on the balance between the ground state emission and the first excited state emission of QDs. The gain process of the two-section QD-SLD with different pumping levels in the two sections is investigated.
Highlights
Superluminescent diodes [SLDs] have attracted extensive attention for a wide range of applications, such as optical coherence tomography [OCT] [1,2], optical fiber-based sensors [3,4,5], external cavity tunable lasers [6,7,8], optoelectronic systems [9], etc
With the increasing ISOA, the emission spectra are clearly broadened to the short-wavelength side, which should be attributed to the sequential carrier filling into the first ES [ES1]
It can be seen from the figure that the spectrum shape and emission bandwidth of the QD-SLD device with the two-section structure can be tuned by properly controlling the current injection in the two sections
Summary
Superluminescent diodes [SLDs] have attracted extensive attention for a wide range of applications, such as optical coherence tomography [OCT] [1,2], optical fiber-based sensors [3,4,5], external cavity tunable lasers [6,7,8], optoelectronic systems [9], etc. For QD-SLD devices, a high power of 200 mW [14] and a wide spectral bandwidth of more than 140 nm [27,28] have been achieved. By properly controlling the current injection in the two sections of the QD-SLD device, the power tunability over a wide range from 200 to 500 mW is achieved, with the preservation of a nearly constant spectral width. A 20-μm-wide separation between the SLD and the SOA sections is realized by removing the upper Ti/Au ohmic contact and the 0.5-μm epilayer using photolithography and wet chemical etching. The QD-SLD device was characterized by light power-injection current [P-I] and electroluminescence measurements at room temperature under a pulsing (1 kHz repetition rate and 3% duty cycle) injection in the SOA section and a continuous-wave injection, respectively The QD-SLD device was characterized by light power-injection current [P-I] and electroluminescence measurements at room temperature under a pulsing (1 kHz repetition rate and 3% duty cycle) injection in the SOA section and a continuous-wave injection in the SLD section, respectively
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