Abstract
A near-infrared superluminescent diode (SLD) using stacked InAs/GaAs quantum dots (QDs) was developed. The emission wavelength of each QD layer was controlled by varying the thickness of a strain-reducing layer deposited on the QD. The controlled ground state emission peaks enabled formation of a dipless broadband spectrum with the contributions of the first excited state emissions. The bandwidth of the resulting emission was approximately 170 nm with a peak wavelength of 1280 nm. The integrated electroluminescence intensity exhibited a superlinear relation with respect to the injected current density, indicating an SLD emission behavior owing to contributions of stimulated emissions from QDs. The developed broadband SLD was found to be suitable as a potential light source for optical coherence tomography (OCT) leading to improved resolution of OCT images. The axial resolution estimated from the Fourier-transformed spectrum is 4.1 µm.
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