Abstract
A delta -doped GaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (HEMT) utilizing a graded In composition InGaAs channel grown by low-pressure metalorganic chemical vapor deposition was demonstrated. This structure had an extrinsic transconductance as high as 175 (245) mS/mm and a saturation current density a high as 500 (690) mA/mm at 300 (77) K for a gate length of 2 mu m. The maximum transconductance versus gate bias extended over a broad and flat region of more than 2 V at 300 K. A low gate leakage current ( >
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