Abstract
Highly stable (up to 550°C) contacts have been realized in an Al–2%Si contact to n+–p and p+–n shallow junctions (Xj∼0.16 µm) covered by a 0.1 µm thick uniform MoSi2 layer, which was formed by the ion implantation through metal ITM technique. Low contact resistance was maintained, at submicron (0.5 µm square) Al–Si/MoSi2 contacts, after 550°C sintering for 30 minutes.
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