Abstract
This study investigates the feasibility of Nano gap embedded AlGaN/GaN HEMT to sense antibody-antigen reaction. The sensor can detect the binding response of a typical antibody Ixodes ricinus immunosuppressor (anti-Iris) protein in Nano cavity. The sensor performance is analyzed by the change in electrical characteristics by the anti-iris antibody and iris antigen interaction. The device performance is optimized independently by varying cavity thickness, cavity length, biomolecule length, and Al composition. The output drain current recorded at VDS = 10V was linearly incremented with the length of the bio layers. The increase in cavity thickness and length will reduce the sensitivity due to a reduction in the cavity fill-in factor. The maximum sensitivity obtained is 169% at a cavity thickness of 10 nm and cavity length of 100 nm with 30% Al content. Silvaco Atlas simulation software has simulated and optimized the proposed device structure.
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