Abstract
AbstractThis paper presents the development of a high-gain photo sensor in 0.35 µm commercial high voltage (HV) CMOS technology. The photo sensor consists of an array of avalanche diodes (APD), each operating in the Geiger-Muller (GM) region together with a passive quenching network, connected in parallel. The primary motivation behind this development is the possibility of monolithic integration of photo sensors and readout electronics in the commercial CMOS process, which is an attractive solution in many areas. Various promising photo sensor structures specific to CMOS technology are implemented, incorporated in a test vehicle (TV), and fabricated in HV CMOS technology. The TCAD simulation, physical design, electrical, and optical characterization of the photo sensor structure that shows the best result among the various structures are presented herewith in this paper.KeywordsHigh-gain photo sensorSPAD in HV CMOSArray of GM-APD
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